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MEMS OSC XO 66.0000MHZ H/LV-CMOS
IC DRAM 2GBIT PARALLEL 96TWBGA
RF SHIELD 3.25" X 5.75" T/H
TA45-2R SERIES CIRCUIT BREAKER
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 2Gb (128M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 667 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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