English
简体中文
XTAL OSC VCXO 491.5200MHZ LVPECL
IC SRAM 18MBIT PARALLEL 100LQFP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 117 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 7.5 ns |
| 电压 - 电源: | 2.375V ~ 2.625V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-LQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GS8662Q18BGD-333IGSI Technology |
IC SRAM 72MBIT PARALLEL 165FPBGA |
|
TC58NVG0S3HTA00Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
MX30LF2G28AD-XKIMacronix |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
GS81282Z36GB-250IGSI Technology |
IC SRAM 144MBIT PAR 119FPBGA |
|
70V3389S5BFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
93LC56A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
UPD44325094BF5-E33-FQ1-ARochester Electronics |
QDR SRAM, 4MX9, 0.45NS |
|
MT46H32M32LFB5-5 AIT:BMicron Technology |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
24LC1026T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIC |
|
STK14D88-NF45IRochester Electronics |
NON-VOLATILE SRAM, 32KX8, 45NS P |
|
CY15B128J-SXECypress Semiconductor |
IC FRAM 128KBIT I2C 3.4MHZ 8SOIC |
|
UPD44165092BF5-E40-EQ3-ARochester Electronics |
QDR SRAM, 2MX9, 0.45NS |
|
CY7C1512KV18-250BZCTCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |