English
简体中文
SRAM
CIR BRKR MAG-HYDR
CIR BRKR MAG-HYDR LEVER
CONN JACK 1PORT 1000 BASE-T PCB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (256K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 2.8 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAT24AA02WI-GT3Rochester Electronics |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
24LC01BT-E/MCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DFN |
|
CY7C11481KV18-400BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
70V05L15PFG8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
24LC02BT-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
MT29F2G08ABAGAWP-AATES:GMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
DS1230AB-70INDRochester Electronics |
IC NVSRAM 256KBIT PAR 28EDIP |
|
BQ4011YMA-150Rochester Electronics |
IC NVSRAM 256KBIT PARALLEL 28DIP |
|
71V416YL10PHGIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S29GL01GS11DHAV20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
S25FL128SAGBHI303Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
S34MS01G200GHI000ZRochester Electronics |
1 GB ECC, 1.8V SLC NAND FLASH |
|
R1LP0408DSB-5SI#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32TSOP II |