类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 256Kb (16K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EM6GE08EW9G-10HEtron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
24LC08BHT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
SST39VF3202C-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
BQ4013MA-120Rochester Electronics |
IC NVSRAM 1MBIT PAR 32DIP MODULE |
|
25LC080D-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
M25P20-VMN6PBFlip Electronics |
IC FLASH 2MBIT SPI 75MHZ 8SO |
|
71V3577S85BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
CY7C25652KV18-550BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS61C1024AL-12TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
IS46TR16256B-125KBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
IS42S32160F-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
IS62WV2568BLL-55TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 32TSOP I |
|
AS7C34098A-15JCNTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |