类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 400 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 60-VFBGA |
供应商设备包: | 60-VFBGA (8x9.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53E384M32D2DS-053 AAT:E TRMicron Technology |
IC DRAM 12GBIT 1.866GHZ 200WFBGA |
|
IS43DR86400C-25DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
24LC024-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
IS46R16160D-6BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
W25X40CLSVIG TRWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8VSOP |
|
CY7C1513KV18-333BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT28C256-15FM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28FLATPK |
|
71T75602S150PFGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
93C06I/JRochester Electronics |
256 BIT MICROWIRE SERIAL EEPROM |
|
AS7C34096A-15TCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
GS8640Z36GT-250IGSI Technology |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
IS45S16400J-6BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
6116LA25TPGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24DIP |