English
简体中文
MEMS OSC XO 4.0960MHZ LVCM LVTTL
IC NVSRAM 1MBIT PARALLEL 48SSOP
COMP O= .687,L= 6.56,W= .075
DIODE GEN PURP 1.6KV 360MA DO204
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-BSSOP (0.295", 7.50mm Width) |
| 供应商设备包: | 48-SSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C144-25AXCRochester Electronics |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
GD25Q40CSIGGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
FM25C160UVM8Rochester Electronics |
EEPROM, 2KX8, SERIAL, CMOS |
|
47C04-I/PRoving Networks / Microchip Technology |
IC EERAM 4KBIT I2C 1MHZ 8DIP |
|
28C17A-15B/XARochester Electronics |
16K (2K X 8) CMOS EEPROM |
|
W971GG6SB-25 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 84WBGA |
|
IS62WV25616DBLL-45TLIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
BR25S320FVM-WTRROHM Semiconductor |
IC EEPROM 32KBIT SPI 20MHZ 8MSOP |
|
71V67603S166PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S26KS512SDABHN030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
CY62256L-70SNCRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOIC |
|
24AA16-E/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
71V3577S80PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |