







MEMS OSC XO 50.0000MHZ H/LV-CMOS
DIODE GEN PURP 600V 4A TO220F-2L
CONN HEADER SMD R/A 44POS 2MM
IC FLASH 512MBIT PARALLEL 56TSOP
| 类型 | 描述 |
|---|---|
| 系列: | GL-T |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 512Mb (64M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 60ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
CY7C1346F-166ACRochester Electronics |
CACHE SRAM, 64KX36, 3.5NS |
|
|
BR24T02F-WGE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8SOP |
|
|
24CW1280T-I/CS1668Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 4CSP |
|
|
NDS36PT5-20ETInsignis Technology Corporation |
IC DRAM 256MBIT PAR 54TSOP II |
|
|
S25FL256SAGMFI001Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
|
71V416YS15YGRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
|
W29GL512SL9BWinbond Electronics Corporation |
IC FLSH 512MBIT PARALLEL 64LFBGA |
|
|
AM27S45A/BKARochester Electronics |
AM27S45 - OTP ROM, 2KX8 |
|
|
S26KS256SDABHM030Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
|
CYDMX128B16-65BVXIRochester Electronics |
DUAL-PORT SRAM, 8KX16, 65NS PBGA |
|
|
CY7C1315TV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
|
71256SA25TPGRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28DIP |
|
|
71V3557S80PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |