







 
                            MOSFET P-CH 100V 3A TO252-3
 
                            IC DRAM 1GBIT PARALLEL 96VFBGA
 
                            SENS 1000PSI M10-1.0 6G 1-5V
 
                            BOX S STEEL 18.03"L X 15.04"W
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tray | 
| 零件状态: | Not For New Designs | 
| 内存类型: | Volatile | 
| 内存格式: | DRAM | 
| 技术: | SDRAM - DDR3L | 
| 内存大小: | 1Gb (64M x 16) | 
| 内存接口: | Parallel | 
| 时钟频率: | 933 MHz | 
| 写周期时间 - 字,页: | - | 
| 访问时间: | 20 ns | 
| 电压 - 电源: | 1.283V ~ 1.45V | 
| 工作温度: | -40°C ~ 95°C (TC) | 
| 安装类型: | Surface Mount | 
| 包/箱: | 96-VFBGA | 
| 供应商设备包: | 96-VFBGA (7.5x13) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IS64WV12816DBLL-12CTLA3-TRISSI (Integrated Silicon Solution, Inc.) | IC SRAM 2MBIT PARALLEL 44TSOP II | 
|   | CY7C1339-166ACRochester Electronics | CACHE SRAM, 128KX32, 3.5NS | 
|   | 93LC46X-I/SNRoving Networks / Microchip Technology | IC EEPROM 1KBIT SPI 2MHZ 8SOIC | 
|   | 71V67803S166BG8Renesas Electronics America | IC SRAM 9MBIT PARALLEL 119PBGA | 
|   | IS46TR16128D-125KBLA2-TRISSI (Integrated Silicon Solution, Inc.) | IC DRAM 2GBIT PARALLEL 96TWBGA | 
|   | BR24T02FV-WE2ROHM Semiconductor | IC EEPROM 2KBIT I2C 8SSOPB | 
|   | 24C01C-I/MCRoving Networks / Microchip Technology | IC EEPROM 1KBIT I2C 400KHZ 8DFN | 
|   | S-24C32CI-J8T1U3ABLIC U.S.A. Inc. | IC EEPROM 32KBIT I2C 400KHZ 8SOP | 
|   | S25FL127SABMFV000Cypress Semiconductor | IC FLASH 128MBIT SPI/QUAD 16SOIC | 
|   | AT93C46D-TP25-BRochester Electronics | AT93C46 - EEPROM, 64X16, SERIAL | 
|   | IS42S16100H-7TLISSI (Integrated Silicon Solution, Inc.) | IC DRAM 16MBIT PAR 50TSOP II | 
|   | CY7C1512AV18-167BZIRochester Electronics | IC SRAM 72MBIT PARALLEL 165FBGA | 
|   | NM25C04ENRochester Electronics | EEPROM, 512X8, SERIAL, CMOS, PDI |