类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 2ms |
访问时间: | - |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR24A64F-WLBH2ROHM Semiconductor |
IC EEPROM 64KBIT I2C 400KHZ 8SOP |
|
W25M02GVTBIT TRWinbond Electronics Corporation |
IC FLSH 2GBIT SPI 104MHZ 24TFBGA |
|
S29GL01GS10FHSS43Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
IS45S16800F-7BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
MR0A16AMA35Everspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 48FBGA |
|
IS62WV6416BLL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48MINIBGA |
|
CAT34C02VP2I-GT3Rochester Electronics |
CAT34C02 - 2 KBIT I2C EEPROM FOR |
|
CY7C25682KV18-500BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
S29GL512S10FHSS40Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
AS4C1G8D3LA-10BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
IS46R16320D-5BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
AS4C128M8D3LB-12BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
MT58L128L36P1T-4.4Rochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |