







XTAL OSC VCXO 35.3280MHZ LVDS
MEMS OSC XO 33.3333MHZ H/LV-CMOS
CONN HEADER SMD 48POS 1MM
IC DRAM 16MBIT PAR 50TSOP II
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 16Mb (512K x 16 x 2) |
| 内存接口: | Parallel |
| 时钟频率: | 125 MHz |
| 写周期时间 - 字,页: | 70ns |
| 访问时间: | 6 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 50-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 50-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
CY7C1470BV25-200BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
|
IS45S32200L-6TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
|
CY7C1515KV18-333BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
|
CY7C1380B-167AIRochester Electronics |
CACHE SRAM, 512KX36, 3.4NS |
|
|
UPD44165364BF5-E40-EQ3Rochester Electronics |
QDR SRAM, 512KX36, 0.45NS |
|
|
AS6C62256A-70SINTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOP |
|
|
S29CD016J1MQAM113Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80PQFP |
|
|
AS4C256M16D3C-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
|
IS43TR81280CL-125JBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
|
CY7C10211BN-10ZXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
|
71V67703S85BQI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
|
S25FL256LDPMFI001Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
|
IS43LR32320B-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90LFBGA |