English
简体中文
XTAL OSC XO 133.333333MHZ HCSL
MEMS OSC XO 3.5700MHZ LVCM LVTTL
IC SRAM 4.5MBIT PAR 256CABGA
LASER DIODE 1586NM 2.511MW
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 2.4V ~ 2.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 256-LBGA |
| 供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V321L25PFGI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
BR24G256FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 256KBIT I2C 1MHZ 8SOPJ |
|
93LC66B-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
|
CY7C2265XV18-600BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
BR25S128F-WE2ROHM Semiconductor |
IC EEPROM 128K SPI 20MHZ 8SOP |
|
GD5F1GQ4UEYIGRGigaDevice |
IC FLASH 1GBIT SPI/QUAD 8WSON |
|
CY62136EV30LL-45BVXIRochester Electronics |
STANDARD SRAM, 128KX16, 45NS PBG |
|
25LC040T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
IS45S32200L-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
DS1245Y-FIRRochester Electronics |
DS1245 3.3V 1024K NV SRAM |
|
AS4C512M8D3LC-12BANAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
71V124SA10TYRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MT41K1G8RKB-107:PMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |