English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 8Kb (1K x 8, 512 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR25G640NUX-3TRROHM Semiconductor |
IC EEPROM 64KBIT VSON008X2030 |
|
IS43TR16128C-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
CY7C21701KV18-400BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
N02L63W3AT25IRochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
IS42RM32100D-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 90TFBGA |
|
AS7C1024B-20JCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS43LR32160C-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
CY7C1061AV33-10BAXIRochester Electronics |
IC SRAM 16MBIT PARALLEL 60FBGA |
|
MX25U51245GXDI00Macronix |
IC FLASH 512MBIT SPI/QU 24CSPBGA |
|
AT27C256R-45JU-TRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
24LC02BHT-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
S29GL064N90FFIS20Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
70V631S15BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
