类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR2-S4 |
内存大小: | 1Gb (32M x 32) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 134-TFBGA |
供应商设备包: | 134-TFBGA (10x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42VM32100D-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 90TFBGA |
|
IS61WV102416FBLL-8TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
CY7C1441KV33-133AXITCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
AS6C8008-55ZINTRAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
SST25PF040CT-40I/MFRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8WDFN |
|
SST39LF802C-55-4C-EKE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
S29GL512S11TFI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
S29GL512S11TFV023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
CY7C1474V25-200BGCRochester Electronics |
ZBT SRAM, 1MX72, 3NS PBGA209 |
|
BR93G56FVM-3GTTRROHM Semiconductor |
IC EEPROM 2KBIT SPI 3MHZ 8MSOP |
|
CY7C2165KV18-450BZCRochester Electronics |
QDR SRAM, 512KX36, 0.45NS, CMOS, |
|
SST39VF1601C-70-4C-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
R1WV6416RBG-5SR#B0Rochester Electronics |
STANDARD SRAM, 4MX16, 55NS |