







 
                            MOSFET N-CH 1000V 13A TO247-3
 
                            CONN FERRULE DIN 8AWG RED
 
                            IC AUDIO RECEIVER 28TSSOP
 
                            IC SRAM 4.5MBIT PARALLEL 119PBGA
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Active | 
| 内存类型: | Volatile | 
| 内存格式: | SRAM | 
| 技术: | SRAM - Synchronous, SDR | 
| 内存大小: | 4.5Mb (128K x 36) | 
| 内存接口: | Parallel | 
| 时钟频率: | 87 MHz | 
| 写周期时间 - 字,页: | - | 
| 访问时间: | 8.5 ns | 
| 电压 - 电源: | 3.135V ~ 3.465V | 
| 工作温度: | -40°C ~ 85°C (TA) | 
| 安装类型: | Surface Mount | 
| 包/箱: | 119-BGA | 
| 供应商设备包: | 119-PBGA (14x22) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | M24C64-DRDW8TP/KSTMicroelectronics | IC EEPROM 64KBIT I2C 1MHZ 8TSSOP | 
|   | IS43LD32640B-18BPLISSI (Integrated Silicon Solution, Inc.) | IC DRAM 2GBIT PARALLEL 168VFBGA | 
|   | GS8662DT38BGD-500IGSI Technology | IC SRAM 72MBIT PARALLEL 165FPBGA | 
|   | GS82564Z18GB-250IGSI Technology | IC SRAM 288MBIT PAR 119FPBGA | 
|   | 71V65703S85BQGIRenesas Electronics America | IC SRAM 9MBIT PARALLEL 165CABGA | 
|   | MT29F512G08EEHAFJ4-3R:AMicron Technology | IC FLASH 512GBIT PAR 132VBGA | 
|   | BR95160-WMN6TPROHM Semiconductor | IC EEPROM 16KBIT SPI 5MHZ 8SO | 
|   | 93C56C-I/SNRoving Networks / Microchip Technology | IC EEPROM 2KBIT SPI 3MHZ 8SOIC | 
|   | SST38VF6404-90-5I-B3KERoving Networks / Microchip Technology | IC FLASH 64MBIT PARALLEL 48TFBGA | 
|   | MT53E768M32D4DT-053 AIT:E TRMicron Technology | IC DRAM 24GBIT 1.866GHZ 200VFBGA | 
|   | IS61C6416AL-12TLIISSI (Integrated Silicon Solution, Inc.) | IC SRAM 1MBIT PARALLEL 44TSOP II | 
|   | 25LC080C-E/SNRoving Networks / Microchip Technology | IC EEPROM 8KBIT SPI 10MHZ 8SOIC | 
|   | AT24C256C-XHL-TRoving Networks / Microchip Technology | IC EEPROM 256KBIT I2C 8TSSOP |