







RES 13.5K OHM 0.1% 1/4W 1206
XTAL OSC VCXO 70.6560MHZ LVDS
IC EEPROM 8KBIT I2C 100KHZ 8SOIC
HDM 9SMPO080F110F T
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 8Kb (1K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 100 kHz |
| 写周期时间 - 字,页: | 15ms |
| 访问时间: | 3.5 µs |
| 电压 - 电源: | 2.7V ~ 4.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
71V3556SA166BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
|
71V321L25TFG8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
|
MT41K128M8DA-107:JMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
|
CY7C1564XV18-366BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
|
BR25L010FVM-WTRROHM Semiconductor |
IC EEPROM 1KBIT SPI 5MHZ 8MSOP |
|
|
MT25QL512ABB8E12-0AAT TRMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
|
UPD46185364BF1-E40-EQ1-ARochester Electronics |
QDR SRAM, 512KX36, 0.45NS |
|
|
CY62147CV33-70BVIRochester Electronics |
256K X 16 SRAM |
|
|
70V24L20PFGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
|
CAT24C64WI-GT3JNRochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
|
S29GL064N11TFIV20Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
|
CY14B116L-Z45XIRochester Electronics |
IC NVSRAM 16MBIT PAR 48TSOP I |
|
|
IS61WV102416EDBLL-10T2LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |