







 
                            CRYSTAL 32.0000MHZ 10PF SMD
 
                            MEMS OSC XO 24.0000MHZ H/LV-CMOS
 
                            MEMS OSC XO 33.0000MHZ H/LV-CMOS
 
                            IC DRAM 256MBIT PARALLEL 90VFBGA
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Active | 
| 内存类型: | Volatile | 
| 内存格式: | DRAM | 
| 技术: | SDRAM - Mobile LPSDR | 
| 内存大小: | 256Mb (8M x 32) | 
| 内存接口: | Parallel | 
| 时钟频率: | 133 MHz | 
| 写周期时间 - 字,页: | 15ns | 
| 访问时间: | 5.4 ns | 
| 电压 - 电源: | 1.7V ~ 1.95V | 
| 工作温度: | -25°C ~ 85°C (TC) | 
| 安装类型: | Surface Mount | 
| 包/箱: | 90-TFBGA | 
| 供应商设备包: | 90-VFBGA (8x13) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | BR25S128GUZ-WE2ROHM Semiconductor | IC EEPROM 128K SPI VCSP35L2 | 
|   | IS46R16320D-6TLA2ISSI (Integrated Silicon Solution, Inc.) | IC DRAM 512MBIT PAR 66TSOP II | 
|   | CY7C144E-15AXIFlip Electronics | IC SRAM 64KBIT PARALLEL 64TQFP | 
|   | CY7C09289V-9AXIFlip Electronics | IC SRAM 1MBIT PARALLEL 100TQFP | 
|   | CAV24C08WE-GT3Sanyo Semiconductor/ON Semiconductor | IC EEPROM 8KBIT I2C 400KHZ 8SOIC | 
|   | MT29F4G08ABADAWP-AATX:DMicron Technology | IC FLASH 4GBIT PARALLEL 48TSOP I | 
|   | 71124S15YRochester Electronics | SRAM 1 MEG (64K X 16-BIT) | 
|   | SST39VF402C-70-4I-B3KERoving Networks / Microchip Technology | IC FLASH 4MBIT PARALLEL 48TFBGA | 
|   | 71T75602S133PFGRenesas Electronics America | IC SRAM 18MBIT PARALLEL 100TQFP | 
|   | AS6C4008A-55SINAlliance Memory, Inc. | IC SRAM 4MBIT PARALLEL 32SOP | 
|   | MT46H32M32LFB5-5 IT:B TRMicron Technology | IC DRAM 1GBIT PARALLEL 90VFBGA | 
|   | IS42VM16400M-75BLIISSI (Integrated Silicon Solution, Inc.) | IC DRAM 64MBIT PARALLEL 54TFBGA | 
|   | BR24A01AFJ-WME2ROHM Semiconductor | IC EEPROM 1KBIT I2C 400KHZ 8SOPJ |