English
简体中文
IC FLASH 32MBIT SPI 104MHZ 8SOIC
XTAL OSC XO 672.2500MHZ LVDS SMD
IGBT 2500V 28A TO247AD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | XPT™ |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | 2500 V |
| 电流 - 集电极 (ic) (max): | 28 A |
| 电流 - 集电极脉冲 (icm): | 80 A |
| vce(on) (max) @ vge, ic: | 4.5V @ 15V, 12A |
| 功率 - 最大值: | 310 W |
| 开关能量: | 3.56mJ (on), 1.7mJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 56 nC |
| td（开/关）@ 25°c: | 12ns/167ns |
| 测试条件: | 1250V, 12A, 10Ohm, 15V |
| 反向恢复时间 (trr): | 16 ns |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | TO-247AD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IHY20N135R3XKSA1IR (Infineon Technologies) |
IGBT 1350V 40A 310W TO247HC-3 |
|
|
SIGC100T60R3EX1SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V 200A WAFER |
|
|
SIGC12T60SNCX7SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
SIGC12T60SNCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
IRG4CC40FBIR (Infineon Technologies) |
IGBT CHIP |
|
|
IGC11T60TEX7SA1IR (Infineon Technologies) |
IGBT 600V 11A WAFER |
|
|
SIGC14T60SNCX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
SIGC81T60NCX7SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
IGC10T65QEX1SA1IR (Infineon Technologies) |
IGBT CHIP |
|
|
SIGC100T60R3EX1SA4IR (Infineon Technologies) |
IGBT 3 CHIP 600V 200A WAFER |
|
|
SIGC14T60SNCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
SIGC25T60NCX1SA6IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
SIGC07T60SNCX1SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |