English
简体中文
MEMS OSC XO 10.0000MHZ LVCMOS LV
IKW25T120 - DISCRETE IGBT WITH A
IC SRAM 8MBIT PARALLEL 44TSOP II
SLIDE POT 200KOHM 0.25W TOP 45MM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | - |
| 电流 - 集电极 (ic) (max): | - |
| 电流 - 集电极脉冲 (icm): | - |
| vce(on) (max) @ vge, ic: | - |
| 功率 - 最大值: | - |
| 开关能量: | - |
| 输入类型: | - |
| 栅极电荷: | - |
| td（开/关）@ 25°c: | - |
| 测试条件: | - |
| 反向恢复时间 (trr): | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STGY40NC60VDSTMicroelectronics |
IGBT 600V 80A 260W MAX247 |
|
FGB3040CSRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
IKW50N65RH5XKSA1IR (Infineon Technologies) |
INDUSTRY 14 |
|
IRGS4064DPBFRochester Electronics |
IGBT WITH RECOVERY DIODE |
|
RGPR30NS40HRTLROHM Semiconductor |
400V 30A IGNITION IGBT |
|
IXBA16N170AHVWickmann / Littelfuse |
REVERSE CONDUCTING IGBT |
|
IKD04N60RBTMA1Rochester Electronics |
IGBT WITHOUT ANTI-PARALLEL DIODE |
|
STGF19NC60WDSTMicroelectronics |
IGBT 600V 14A 32W TO220FP |
|
FGH40T120SMDL4Rochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
IRG7PSH50UDPBFRochester Electronics |
IRG7PSH50 - DISCRETE IGBT WITH A |
|
STGF20H65DFB2STMicroelectronics |
TRENCH GATE FIELD-STOP 650 V, 20 |
|
IKA15N60TXKSA1IR (Infineon Technologies) |
IGBT TRENCH 600V 14.7A TO220-3 |
|
STGWA30H65DFBSTMicroelectronics |
IGBT |