English
简体中文
BREADBOARD GENERAL PURPOSE
RF ATTENUATOR 31.75DB 32WFQFN
PWR ENT RCPT IEC320-C8 PANEL QC
MOSFET N-CH 500V 12A TO204AE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/543 |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 500mOhm @ 12A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 120 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 4W (Ta), 150W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-204AE (TO-3) |
| 包/箱: | TO-204AE |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
TSM680P06CI C0GTSC (Taiwan Semiconductor) |
MOSFET P-CH 60V 18A ITO220 |
|
|
CP375-CWDM3011N-CTCentral Semiconductor |
MOSFET N-CH 11A 30V BARE DIE |
|
|
AUXBNLS3036TRLIR (Infineon Technologies) |
MOSFET N-CH 60V 195A D2-PAK |
|
|
ATP405-TL-HXSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH DPAK |
|
|
IRFPS38N60LVishay / Siliconix |
MOSFET N-CH 600V 38A SUPER247 |
|
|
64-2028IR (Infineon Technologies) |
MOSFET N-CH 55V 75A D2PAK |
|
|
IRFC4668EFIR (Infineon Technologies) |
MOSFET N-CH WAFER |
|
|
CP373-CTLDM303N-CTCentral Semiconductor |
MOSFET N-CH 30V 3.6A DIE |
|
|
94-4849PBFIR (Infineon Technologies) |
MOSFET P-CH 55V 11A DPAK |
|
|
RJK5014DPK-00#T0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V |
|
|
JAN2N7236UMicrosemi |
MOSFET P-CH 100V 18A TO267AB |
|
|
AON7422GSAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 8SOIC |
|
|
CTLDM7003-M621 TRCentral Semiconductor |
MOSFET N-CH 50V 280MA TLM621 |