







 
                            XTAL OSC VCXO 204.8000MHZ LVPECL
 
                            TRIMMER 200K OHM 0.125W GW SIDE
 
                            HDM/FA SAPR.200F.300F LM CONT
 
                            IGBT
| 类型 | 描述 | 
|---|---|
| 系列: | * | 
| 包裹: | Tray | 
| 零件状态: | Obsolete | 
| 场效应管类型: | - | 
| 技术: | - | 
| 漏源电压 (vdss): | - | 
| 电流 - 连续漏极 (id) @ 25°c: | - | 
| 驱动电压(最大 rds on,最小 rds on): | - | 
| rds on (max) @ id, vgs: | - | 
| vgs(th) (最大值) @ id: | - | 
| 栅极电荷 (qg) (max) @ vgs: | - | 
| vgs (最大值): | - | 
| 输入电容 (ciss) (max) @ vds: | - | 
| 场效应管特征: | - | 
| 功耗(最大值): | - | 
| 工作温度: | - | 
| 安装类型: | - | 
| 供应商设备包: | - | 
| 包/箱: | - | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IRFI4121H-117PIR (Infineon Technologies) | MOSFET N-CH 100V 11A TO220-5 | 
|   | JANTXV2N6784Microsemi | MOSFET N-CH 200V 2.25A TO205AF | 
|   | RJK0654DPB-WS#J5Renesas Electronics America | IGBT | 
|   | NP109N04PUJ-E2B-AYRenesas Electronics America | TRANSISTOR | 
|   | IXTM12N100Wickmann / Littelfuse | MOSFET N-CH 1000V 12A TO204AA | 
|   | V30429-T1-GE3Vishay / Siliconix | MOSFET N-CH SMD | 
|   | RQK0608BQDQS#H1Renesas Electronics America | MOSFET | 
|   | NTMKE4891NT1GSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 25V 26.7A 4ICEPAK | 
|   | TPCF8102(TE85L,F,MToshiba Electronic Devices and Storage Corporation | MOSFET P-CH 20V 6A VS-8 | 
|   | NP110N055PUJ-E1B-AYRenesas Electronics America | TRANSISTOR | 
|   | AON6362FHAlpha and Omega Semiconductor, Inc. | MOSFET N-CH 30V 27A/60A 8DFN | 
|   | JAN2N6764T1Microsemi | MOSFET N-CH 100V 38A TO254AA | 
|   | NTMFS4833NST3GSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 30V 16A/156A SO-8FL |