English
简体中文
HI STRNGTH ROLL 9X30' A VFN
JFET N-CH 30V 0.35W TO92
HDM SMPR081F157O G
MOSFET N-CH 30V 12A PPAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 16mOhm @ 7.2A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1230 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta), 31W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® ChipFet Single |
| 包/箱: | PowerPAK® ChipFET™ Single |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
RJK5035DPP-A0#T2Renesas Electronics America |
MOSFET N-CH 600V 5A TO220FP |
|
|
AO3415_108Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V SOT23 |
|
|
IPS70N10S3L-12IR (Infineon Technologies) |
MOSFET N-CH 1TO251-3 |
|
|
SI4467DYBAA005APSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 13.5A 8SOIC |
|
|
V30391-T1-E3Vishay / Siliconix |
MOSFET N-CH SMD |
|
|
IXTD1R4N60P 11Wickmann / Littelfuse |
MOSFET N-CH 600V 1.4A DIE |
|
|
IPC60R037P7X7SA1IR (Infineon Technologies) |
MOSFET N-CH HI POWER WAFER |
|
|
64-2144PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 9.3A D2PAK |
|
|
UPD70F3417GC(A)-V01-UEU-QS-AXRenesas Electronics America |
MOSFET N-CH |
|
|
AOD518_050Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15A/54A TO252 |
|
|
JANTX2N6796UMicrosemi |
MOSFET N-CH 100V 8A 18ULCC |
|
|
NP33N075YDF-E1-AYRenesas Electronics America |
TRANSISTOR |
|
|
AUXHKGP4062D-EIR (Infineon Technologies) |
IC DISCRETE |