







 
                            XTAL OSC XO 50.0000MHZ LVPECL
 
                            XTAL OSC XO 167.3316MHZ LVPECL
 
                            MOSFET N-CH 600V 18A TO247AD
 
                            DIODE GENERAL PURPOSE 2010 SMD
| 类型 | 描述 | 
|---|---|
| 系列: | POWER MOS IV® | 
| 包裹: | Tube | 
| 零件状态: | Obsolete | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 600 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 400mOhm @ 9A, 10V | 
| vgs(th) (最大值) @ id: | 4V @ 1mA | 
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V | 
| vgs (最大值): | ±30V | 
| 输入电容 (ciss) (max) @ vds: | 2950 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 310W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Through Hole | 
| 供应商设备包: | TO-247AD | 
| 包/箱: | TO-247-3 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | JANTX2N7225Microsemi | MOSFET N-CH 200V 27.4A TO254AA | 
|   | IPC60R125C6UNSAWNX6SA1IR (Infineon Technologies) | MOSFET N-CH BARE DIE | 
|   | IRLML0100TRPBF-1IR (Infineon Technologies) | MOSFET N-CH 100V 1.6A SOT23 | 
|   | SI5446DU-T1-GE3Vishay / Siliconix | MOSFET N-CH 30V 25A PPAK | 
|   | AON6718L_101Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 30V 18A/80A 8DFN | 
|   | 2N7225Microsemi | MOSFET N-CH 200V 27.4A TO254AA | 
|   | FQD5N50CTM-WSSanyo Semiconductor/ON Semiconductor | MOSFET N-CHANNEL 500V 4A TO252 | 
|   | UPD703069YGJ-169-UEN-ARenesas Electronics America | MOSFET N-CH | 
|   | IPC60R950C6UNSAWNX6SA1IR (Infineon Technologies) | MOSFET N-CH BARE DIE | 
|   | RQA0011DNS#G0Renesas Electronics America | MOSFET N-CH 16V 3.8A 2HWSON | 
|   | JAN2N6788UMicrosemi | MOSFET N-CH 100V 4.5A 18ULCC | 
|   | SIR774DP-T1-GE3Vishay / Siliconix | MOSFET N-CH 30V | 
|   | STI18N60M2STMicroelectronics | MOSFET N-CH 600V 9A I2PAK |