







INSULATION DISPLACEMENT TERMINAL
MOSFET N-CH DPAK
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗(最大值): | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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2SK3408-T1B-ATRenesas Electronics America |
MOSFET N-CH 43V 1A SC96-3 |
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64-2143PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A D2PAK |
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JANTXV2N6760Microsemi |
MOSFET N-CH 400V 5.5A TO204AA |
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APT5022BNGMicrosemi |
MOSFET N-CH 500V 27A TO247AD |
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2N6768T1Microsemi |
MOSFET N-CH 400V 14A TO254AA |
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APTM50DAM38CTGMicrosemi |
MOSFET N-CH 500V 90A SP4 |
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STL287N4F7AGSTMicroelectronics |
MOSFET N-CH 40V PWRFLAT 8X8 |
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IRFC130NBIR (Infineon Technologies) |
MOSFET 100V 17A DIE |
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AON6370PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 23A DFN |
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IXTM6N90AWickmann / Littelfuse |
MOSFET N-CH 900V 6A TO204AA |
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JANTXV2N6788Microsemi |
MOSFET N-CH 100V 6A TO205AF |
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CP373-CMPDM303NH-WNCentral Semiconductor |
MOSFET N-CH 30V 3.6A DIE |
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VQ1004P-2Vishay / Siliconix |
MOSFET N-CH 60V 0.4A TO-205 |