English
简体中文
MOSFET N-CH 100V 45A DFN5060
CONN BARRIER STRIP 6CIRC 0.563"
SENSOR 750PSI 1/4-18NPT .5-4.5V
LED MODULE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 45A (Tj) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 45 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2240 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 75W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN5060 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BSC014N06NSSCATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 261A WSON-8 |
|
|
NTMYS4D5N04CTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 20A/80A 4LFPAK |
|
|
SI4463DYRochester Electronics |
P-CHANNEL MOSFET |
|
|
NTH4L080N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 29A TO247-4 |
|
|
2SJ143(2)-S6-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
UPA2201UT1M-T1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
UPA2630T1R-E2-AXRenesas Electronics America |
MOSFET P-CH 12V 7A 6HUSON |
|
|
RJK6012DPP-K0#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTMFS015N10MCLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10.5A/54A 5DFN |
|
|
NEM090603M-28-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SJ133-Z-E1-AZRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
NTPF190N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20A TO220FP |
|
|
3SK317ZR-TL-ERochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |