







BIG CHIP LED HB MODULE 850LM WHT
MEMS OSC XO 38.0000MHZ H/LV-CMOS
NANOCRYSTALLINE CORE, 160X130X25
MOSFET N-CH 700V 3.5A IPAK
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ M6 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 700 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.5A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 1.4Ohm @ 1.75A, 10V |
| vgs(th) (最大值) @ id: | 3.75V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 5.1 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 170 pF @ 100 V |
| 场效应管特征: | - |
| 功耗(最大值): | 45W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AUIRFC8407TRRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
|
2SK3290BNTL-ERochester Electronics |
N-CHANNEL MOSFET |
|
|
RFM10N15LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
STD2002T4Rochester Electronics |
NFET DPAK SPCL 60V TR |
|
|
SSS4N60BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RJK03P1DPA-00#J5ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTMTS0D4N04CTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 79.8A/558A 8DFNW |
|
|
SI3420-TPMicro Commercial Components (MCC) |
MOSFET N-CHANNEL 20V 6A SOT23 |
|
|
BSZ049N03LSCGATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NVMFS5C670NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17A/71A 5DFN |
|
|
MCG30N03A-TPMicro Commercial Components (MCC) |
MOSFET N-CH 30V 30A DFN3333 |
|
|
2SJ327-AZRochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
2SK1839-TL-ERochester Electronics |
NCH 0.1A 30V MOSFET |