English
简体中文
RES 53.6 OHM 0.5% 1/16W 0402
NPN EPITAXIAL PLANAR SILICON
MOSFET N-CH 30V 28A/63A 8DFN
CBL FMALE RA TO WIRE 5POS 3.28'
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 28A (Ta), 63A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 5.2mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1000 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 6.2W (Ta), 31W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN-EP (5x6) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
RJK0379DPA-00#J53Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NVMFS6H801NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 24A/160A 5DFN |
|
|
RJK2017DPP-90#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
CMS70N10H8-HFComchip Technology |
MOSFET N-CH 100V 70A DFN5X6 |
|
|
DMP3007SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 70A POWERDI3333 |
|
|
PMPB30XPEXNexperia |
PMPB30XPE/SOT1220/SOT1220 |
|
|
2SJ356-T1-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
DMP6023LEQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 7A SOT223 T&R |
|
|
RJK0380DPA-02#J0Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
|
RD3U041AAFRATLROHM Semiconductor |
MOSFET N-CH 250V 4A TO252 |
|
|
UPA2723T1A-E1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
BSF134N10NJ3 GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK1485-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |