English
简体中文
XTAL OSC XO 156.2500MHZ LVDS SMD
MEMS OSC XO 31.2500MHZ H/LV-CMOS
MOSFET N-CH 12V 13A PPAK SO-8
DIODE SCHOTTKY 45V 10A TO220AC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 5.5mOhm @ 17A, 4.5V |
| vgs(th) (最大值) @ id: | 1.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.9W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI4487DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 11.6A 8SO |
|
IRF540ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A D2PAK |
|
IRF7425PBFIR (Infineon Technologies) |
MOSFET P-CH 20V 15A 8SO |
|
SI5857DU-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 6A PPAK CHIPFET |
|
NTD4857N-35GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 12A/78A IPAK |
|
STI30NM60NSTMicroelectronics |
MOSFET N-CH 600V 25A I2PAK |
|
IRLR2705TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 28A DPAK |
|
IPP230N06L3 GIR (Infineon Technologies) |
MOSFET N-CH 60V 30A TO220-3 |
|
BSC046N10NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 17A/100A TDSON |
|
IXTY2N60PWickmann / Littelfuse |
MOSFET N-CH 600V 2A TO252 |
|
64-9146IR (Infineon Technologies) |
MOSFET N-CH 20V 32A DIRECTFET |
|
SI4892DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 8.8A 8SO |
|
STB75N20STMicroelectronics |
MOSFET N-CH 200V 75A D2PAK |