English
简体中文
CRYSTAL 26.0000MHZ 18PF SMD
MOSFET N-CH 100V 38.5A TO220AB
IC CONV PWM UVLO HV 7DIP
CIR BRKR THRM 2A 250VAC 50VDC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 38.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 30mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta), 89W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTHS2101PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 8V 5.4A CHIPFET |
|
IRFS11N50ATRRVishay / Siliconix |
MOSFET N-CH 500V 11A D2PAK |
|
IRFS17N20DPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 16A D2PAK |
|
AUIRFL024NIR (Infineon Technologies) |
MOSFET N-CH 55V 2.8A SOT-223 |
|
IRF740STRRVishay / Siliconix |
MOSFET N-CH 400V 10A D2PAK |
|
IPU04N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO251-3 |
|
AO4771Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 4A 8SOIC |
|
IPP13N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO220-3 |
|
FDC3612_F095Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 2.6A SUPERSOT6 |
|
TPCP8103-H(TE85LFMToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 4.8A PS-8 |
|
ZVP4424ASTOBZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 240V 200MA E-LINE |
|
FDT55AN06LA0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12.1A SOT223-4 |
|
NTF3055L108T3LFGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |