







MEMS OSC XO 24.0000MHZ H/LV-CMOS
MOSFET N-CH 50V 100MA SSSMINI3
.050 (1.27) SOCKET DISCRETE CABL
RECT BRIDGE 3PH 1200V FO-T-A
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 50 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100mA (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 2.5V, 4V |
| rds on (max) @ id, vgs: | 12Ohm @ 10mA, 4V |
| vgs(th) (最大值) @ id: | 1.5V @ 1µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±7V |
| 输入电容 (ciss) (max) @ vds: | 12 pF @ 3 V |
| 场效应管特征: | - |
| 功耗(最大值): | 100mW (Ta) |
| 工作温度: | 125°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SSSMini3-F1 |
| 包/箱: | SOT-723 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IRF3704ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 67A D2PAK |
|
|
IRL3302STRRIR (Infineon Technologies) |
MOSFET N-CH 20V 39A D2PAK |
|
|
SI7620DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 13A PPAK1212-8 |
|
|
IRF6645TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 5.7A DIRECTFET |
|
|
IPD60R380P6BTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO252-3 |
|
|
BTS247Z E3062AIR (Infineon Technologies) |
MOSFET N-CH 55V 33A TO263-5 |
|
|
IRFU9N20DIR (Infineon Technologies) |
MOSFET N-CH 200V 9.4A IPAK |
|
|
PH6530AL,115NXP Semiconductors |
MOSFET N-CH 30V LFPAK56 PWR-SO8 |
|
|
EPC2007EPC |
GANFET N-CH 100V 6A DIE OUTLINE |
|
|
AUIRFU4292IR (Infineon Technologies) |
MOSFET N CH 250V 9.3A IPAK |
|
|
STD19NF20STMicroelectronics |
MOSFET N-CHANNEL 200V 15A DPAK |
|
|
IRFR9010TRLVishay / Siliconix |
MOSFET P-CH 50V 5.3A DPAK |
|
|
IPP80N04S2H4AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |