English
简体中文
TRANS PREBIAS NPN/PNP 50V SOT563
SHAFT SOLID 1/4"D X 6"L
MOSFET N-CH 900V 2.8A I2PAK
CAP FEEDTHRU 0.047UF 130V AXIAL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.8Ohm @ 1.4A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 680 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.13W (Ta), 107W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK (TO-262) |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI90R1K0C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 900V 5.7A TO262-3 |
|
AOT2906Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V TO220 |
|
FDC645N_F095Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5.5A SUPERSOT6 |
|
STW24NK55ZSTMicroelectronics |
MOSFET N-CH 550V 23A TO247-3 |
|
BSP123L6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 370MA SOT223-4 |
|
SI6465DQ-T1-E3Vishay / Siliconix |
MOSFET P-CH 8V 8.8A 8TSSOP |
|
PHP225NQ04T,127NXP Semiconductors |
MOSFET N-CH 40V 75A TO220AB |
|
IRL3705NSPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 89A D2PAK |
|
SI1422DH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 4A SC70-6 |
|
NP110N03PUG-E1-AYRenesas Electronics America |
MOSFET N-CH 30V 110A TO263 |
|
IRF6611TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 32A DIRECTFET |
|
FQPF2N40Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 1.1A TO220F |
|
RJK4013DPE-00#J3Renesas Electronics America |
MOSFET N-CH 400V 17A 4LDPAK |