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IC DRAM 256MBIT PAR 54TSOP II
MOSFET P-CH 20V 2.7A VS-8
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| 类型 | 描述 |
|---|---|
| 系列: | U-MOSIII |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 110mOhm @ 1.4A, 4.5V |
| vgs(th) (最大值) @ id: | 1.2V @ 200µA |
| 栅极电荷 (qg) (max) @ vgs: | 6 nC @ 5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 470 pF @ 10 V |
| 场效应管特征: | Schottky Diode (Isolated) |
| 功耗（最大值）: | 330mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | VS-8 (2.9x1.5) |
| 包/箱: | 8-SMD, Flat Lead |
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