English
简体中文
CONN HEADER VERT 8POS 2.5MM
CONN RCPT FMALE MINI DIN 8P SLDR
MOSFET N-CH 25V 30A TO251-3
CONN HDR 92POS 0.079 GOLD PCB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 10.4mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 20µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1358 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 52W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | P-TO251-3-1 |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB25NM60N-1STMicroelectronics |
MOSFET N-CH 600V 21A I2PAK |
|
FDPF8N50NZTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 8A TO220F |
|
IRLI2910PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 31A TO220AB FP |
|
IRF6633ATRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 16A DIRECTFET |
|
AOL1458Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 14A/46A ULTRASO8 |
|
IRL530ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 14A TO220-3 |
|
NVMFS5C612NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 36A/235A 5DFN |
|
NDP4050Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 15A TO220-3 |
|
ZVP2120GTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 200MA SOT223 |
|
FQPF9N15Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 6.9A TO220F |
|
2SJ053600LPanasonic |
MOSFET P-CH 30V 100MA SMINI3-G1 |
|
STP15NM60NDSTMicroelectronics |
MOSFET N-CH 600V 14A TO220AB |
|
TK13A65U(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13A TO220SIS |