English
简体中文
XTAL OSC XO 122.8800MHZ LVDS
XTAL OSC VCXO 61.4400MHZ LVDS
SENSOR THROUGH-BEAM 70MM INDUCT
MOSFET N-CH 55V 26A DPAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 26A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 50mOhm @ 4.7A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 42 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 740 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 79W (Tc) |
| 工作温度: | -40°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT20M38SVFRGMicrosemi |
MOSFET N-CH 200V 67A D3PAK |
|
IRFIB6N60AVishay / Siliconix |
MOSFET N-CH 600V 5.5A TO220-3 |
|
SPA11N60C3INIR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO220-3-31 |
|
PHP96NQ03LT,127NXP Semiconductors |
MOSFET N-CH 25V 75A TO220AB |
|
STDLED524STMicroelectronics |
MOSFET N-CH 525V 4A DPAK |
|
SIE836DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 18.3A 10POLARPK |
|
FDH15N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 15A TO247-3 |
|
AOTF11C60PLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO220-3F |
|
STP16NS25STMicroelectronics |
MOSFET N-CH 250V 16A TO220AB |
|
SI2331DS-T1-E3Vishay / Siliconix |
MOSFET P-CH 12V 3.2A SOT23-3 |
|
AON1620Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 12V 4A 6DFN |
|
AO4404BLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 8.5A 8SO |
|
2SK066500LPanasonic |
MOSFET N-CH 20V 100MA SMINI3-G1 |