English
简体中文
MEMS OSC XO 18.4320MHZ LVCMOS LV
AC/DC CONVERTER 9V 40W
MOSFET N-CH 55V 68A D2PAK
![DTS24F25-24JB [V001]](http://cdn-us.gangbo-ic.com/images/pages/thumb-product-image.jpg)
RECP ASSY
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 68A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 14mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 2900 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 142W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI2309DS-T1-E3Vishay / Siliconix |
MOSFET P-CH 60V 1.25A SOT23-3 |
|
SPP80N08S2L-07IR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO220-3 |
|
NTD2955GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A DPAK |
|
IRF7807D2TRIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
|
IXFK25N90Wickmann / Littelfuse |
MOSFET N-CH 900V 25A TO264AA |
|
2N6782Microsemi |
MOSFET N-CH 100V 3.5A TO39 |
|
BS108/01,126NXP Semiconductors |
MOSFET N-CH 200V 300MA TO92-3 |
|
FQPF11N40CTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO220F |
|
HUFA75339S3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK |
|
IRF1010NSPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 85A D2PAK |
|
IPB06CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 100A D2PAK |
|
PHM30NQ10T,518NXP Semiconductors |
MOSFET N-CH 100V 37.6A 8HVSON |
|
IRFL014Vishay / Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |