English
简体中文
DIODE GEN PURP 400V 1A DO220AA
MOSFET N-CH 60V 35A TO220NIS
IC FF D-TYPE SNGL 8BIT 20TSSOP
ER 20C 20#16 SKT PLUG RTANG
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSIII |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 35A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 12.5mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 91 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5120 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 35W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220NIS |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AO4708Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15A 8SOIC |
|
BTS244Z E3062AIR (Infineon Technologies) |
MOSFET N-CH 55V 35A TO220-5-62 |
|
IRF840LCSVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
SI2372DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 4A/5.3A SOT23-3 |
|
IPB80N06S2L-H5IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
MTD6P10ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 6A DPAK |
|
FDI9406-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 110A I2PAK |
|
STF11N65K3STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
IRFPC50Vishay / Siliconix |
MOSFET N-CH 600V 11A TO247-3 |
|
STD22NF06AGSTMicroelectronics |
MOSFET N-CH 60V 23A DPAK |
|
PMZ270XN,315Nexperia |
MOSFET N-CH 20V 2.15A DFN1006-3 |
|
SPB160N04S2L03DTMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 160A TO263-7 |
|
PMN50XP,165NXP Semiconductors |
MOSFET P-CH 20V 4.8A 6TSOP |