







XTAL OSC VCXO 128.0000MHZ HCSL
IC SRAM 18MBIT PARALLEL 119PBGA
MOSFET N-CH 55V 75A I2PAK
TERM BLOCK MARKER
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.4mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 60 nC @ 5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 7565 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 258W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
NTP30N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 27A TO220AB |
|
|
IRFR214TRVishay / Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
|
|
IRF7805ATRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13A 8SO |
|
|
BUZ31L E3044AIR (Infineon Technologies) |
MOSFET N-CH 200V 13.5A TO220-3 |
|
|
AON6248Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 17.5A/53A 8DFN |
|
|
IPD26DP06NMSAUMA1IR (Infineon Technologies) |
MOSFET P-CH 60V TO252-3 |
|
|
SI6459BDQ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 2.2A 8TSSOP |
|
|
IRF6715MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 25V 34A DIRECTFET |
|
|
SI4833BDY-T1-GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 4.6A 8SOIC |
|
|
IRLR3103TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 55A DPAK |
|
|
PSMN8R0-30YLC,115NXP Semiconductors |
MOSFET N-CH 30V 54A LFPAK56 |
|
|
AON6405L_102Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A/30A 8DFN |
|
|
IRF2807STRLIR (Infineon Technologies) |
MOSFET N-CH 75V 82A D2PAK |