







MEMS OSC XO 15.0000MHZ CMOS SMD
MOSFET N-CH 30V 60A POWERFLAT
2G30UM 30A CIRCUIT BREAKER G CHA
TERM BLOCK 20POS 45DEG 5MM PCB
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ V |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 7.1mOhm @ 8.5A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8 nC @ 4.5 V |
| vgs (最大值): | ±22V |
| 输入电容 (ciss) (max) @ vds: | 1290 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 60W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerFlat™ (5x6) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BSP92P E6327IR (Infineon Technologies) |
MOSFET P-CH 250V 260MA SOT223-4 |
|
|
SI7748DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
|
|
RDN120N25FU6ROHM Semiconductor |
MOSFET N-CH 250V 12A TO220FN |
|
|
DMG302PU-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 25V 170MA SOT23-3 |
|
|
NTB65N02RT4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 65A D2PAK |
|
|
SPP11N60CFDHKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11A TO220-3 |
|
|
SIA444DJT-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SC70-6 |
|
|
AOT460_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 85A TO220 |
|
|
IPI26CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO262-3 |
|
|
IPD20N03LIR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
|
|
IRFBE20SVishay / Siliconix |
MOSFET N-CH 800V 1.8A D2PAK |
|
|
IRFBC40LCSTRRVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
|
BSS816NW L6327IR (Infineon Technologies) |
MOSFET N-CH 20V 1.4A SOT323-3 |