English
简体中文
XTAL OSC XO 26.0000MHZ HCMOS SMD
MEMS OSC XO 45.0000MHZ CMOS SMD
OSC XO 100MHZ 1.8V CML
MOSFET N-CH 55V 80A TO262-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 8mOhm @ 58A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 96 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 215W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO262-3-1 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FCD4N60TM_WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 3.9A DPAK |
|
TSM230N06CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 50A TO220 |
|
BSS126L6906HTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
|
APT18F60SMicrosemi |
MOSFET N-CH 600V 19A D3PAK |
|
IRFBC40LCSTRLVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
IXTT60N10Wickmann / Littelfuse |
MOSFET N-CH 100V 60A TO268 |
|
FCPF20N60FSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20A TO220F |
|
AO4488L_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15A 8SOIC |
|
IPU06N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO251-3 |
|
IXFH40N30QWickmann / Littelfuse |
MOSFET N-CH 300V 40A TO247AD |
|
IRF730ASVishay / Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
|
2SK1058-ERenesas Electronics America |
MOSFET N-CH 160V 7A TO3P |
|
ZVN3320ASTOBZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 100MA E-LINE |