







CONN TERM BLK DISCONN 16-26AWG
MOSFET N-CH 30V 11A 5DFN
2MM DOUBLE ROW MALE IDC ASSEMBLY
SENSOR 75PSI 1/4-18NPT 4-20MA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.5mOhm @ 26A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3600 pF @ 24 V |
| 场效应管特征: | - |
| 功耗(最大值): | 900mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IPB10N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO263-3 |
|
|
IPB04N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO263-3 |
|
|
FCH099N65S3_F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 30A TO247-3 |
|
|
NTGS3443T1Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.2A 6TSOP |
|
|
NDD60N745U1-1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.6A IPAK |
|
|
STP3NB100STMicroelectronics |
MOSFET N-CH 1000V 3A TO220AB |
|
|
IRL3714SPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 36A D2PAK |
|
|
IRF7424GTRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 11A 8SO |
|
|
IPB80N06S2L05ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
|
FQP1P50Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 1.5A TO220-3 |
|
|
IRL3103D1IR (Infineon Technologies) |
MOSFET N-CH 30V 64A TO220AB |
|
|
IPP037N08N3GE8181XKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TO220-3 |
|
|
IRF540ZLIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO262 |