English
简体中文
INDICATOR 12V 8MM PROMINENT GRN
XTAL OSC VCXO 160.0000MHZ LVDS
64 KB M0+ USB +17 DBM EZRADIOPRO
MOSFET N-CH 60V 5A 8SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 55mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 540 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOIC |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF9520LVishay / Siliconix |
MOSFET P-CH 100V 6.8A I2PAK |
|
SPB80N06S2-07IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
IRF9520SVishay / Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
|
SPB07N60C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO263-3 |
|
IRF3305IR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
|
IRFSL9N60AVishay / Siliconix |
MOSFET N-CH 600V 9.2A TO262-3 |
|
NP23N06YDG-E1-AYRenesas Electronics America |
MOSFET N-CH 60V 23A 8HSON |
|
IRLR3714ZTRIR (Infineon Technologies) |
MOSFET N-CH 20V 37A DPAK |
|
IRLR8113IR (Infineon Technologies) |
MOSFET N-CH 30V 94A DPAK |
|
AUIRF4104IR (Infineon Technologies) |
MOSFET N-CH 40V 75A TO220 |
|
IRLR8103VTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 91A DPAK |
|
NTD110N02RST4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 100A DPAK |
|
TK4P60DA(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 3.5A DPAK |