English
简体中文
OSC XO 320MHZ 3.3V LVDS
MOSFET N-CH 30V 92A POWERFLAT
ELEC MODULE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ H7 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 92A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.7mOhm @ 11.5A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 13.7 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2100 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.9W (Ta), 50W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerFlat™ (3.3x3.3) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD60NF3LLT4STMicroelectronics |
MOSFET N-CH 30V 60A DPAK |
|
FDR858PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 8A SUPERSOT8 |
|
DMP3100L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 2.7A SOT23-3 |
|
IPP10N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO220-3 |
|
SN7002NL6433HTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 200MA SOT23-3 |
|
STB60NH02LT4STMicroelectronics |
MOSFET N-CH 24V 60A D2PAK |
|
2N7000-APMicro Commercial Components (MCC) |
MOSFET N-CH 60V 200MA TO92 |
|
STP140N4F6STMicroelectronics |
MOSFET N-CHANNEL 40V 80A TO220 |
|
IPL65R460CFDAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 8.3A THIN-PAK |
|
SIB455EDK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 9A PPAK SC75-6 |
|
IRF7701TRIR (Infineon Technologies) |
MOSFET P-CH 12V 10A 8TSSOP |
|
AON6414ALAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13A/30A 8DFN |
|
IRLU3714ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 37A I-PAK |