







XTAL OSC XO 125.0000MHZ LVPECL
CONN SOCKET 17-20AWG CRIMP TIN
MOSFET N-CH 30V 75A SOT223
PS1813-6F-M180X130X63MM ENCL POL
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | 3.3mOhm @ 140A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 200 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 5730 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | - |
| 工作温度: | - |
| 安装类型: | Through Hole |
| 供应商设备包: | SOT-223 |
| 包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
FCD4N60TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 3.9A DPAK |
|
|
FQD24N08TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 19.6A DPAK |
|
|
IRF100P219AKMA1IR (Infineon Technologies) |
MOSFET N-CH 100V TO247AC |
|
|
IRFR9110TRVishay / Siliconix |
MOSFET P-CH 100V 3.1A DPAK |
|
|
IPD90R1K2C3BTMA1IR (Infineon Technologies) |
MOSFET N-CH 900V 5.1A TO252-3 |
|
|
FQD20N06LTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17.2A DPAK |
|
|
SPB100N03S2-03 GIR (Infineon Technologies) |
MOSFET N-CH 30V 100A TO263-3 |
|
|
FQB19N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 19A D2PAK |
|
|
VS-FB190SA10Vishay General Semiconductor – Diodes Division |
MOSFET N-CH 100V 190A SOT227 |
|
|
IRLR8503PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 44A DPAK |
|
|
STD30NE06LSTMicroelectronics |
MOSFET N-CH 60V 30A DPAK |
|
|
IRF8714GTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 14A 8SO |
|
|
IPB09N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO263-3 |