English
简体中文
MEMS OSC XO 28.6363MHZ H/LV-CMOS
MOSFET N-CH 200V 9.4A DPAK
CONN RCPT FMALE 10P GOLD SLD CUP
CONN PLUG FMALE 35POS GOLD CRIMP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 380mOhm @ 5.6A, 10V |
| vgs(th) (最大值) @ id: | 5.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 27 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 560 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 86W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVMFS5C645NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A/100A 5DFN |
|
IRFS9N60ATRRVishay / Siliconix |
MOSFET N-CH 600V 9.2A D2PAK |
|
AOW290Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 17.5/140A TO262 |
|
IRF730ALVishay / Siliconix |
MOSFET N-CH 400V 5.5A I2PAK |
|
IRF6618IR (Infineon Technologies) |
MOSFET N-CH 30V 30A DIRECTFET |
|
STW8NB100STMicroelectronics |
MOSFET N-CH 1000V 7.3A TO247-3 |
|
STD3NK60ZDSTMicroelectronics |
MOSFET N-CH 600V 2.4A DPAK |
|
AON7400AL_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15A/40A 8DFN |
|
IRLR3715ZTRIR (Infineon Technologies) |
MOSFET N-CH 20V 49A DPAK |
|
IXTH200N085TWickmann / Littelfuse |
MOSFET N-CH 85V 200A TO247 |
|
TSM8N50CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 500V 7.2A TO251 |
|
IXTH41N25Wickmann / Littelfuse |
MOSFET N-CH 250V 41A TO247 |
|
IRF7705GTRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 8A 8TSSOP |