English
简体中文
CRYSTAL 26.0000MHZ 19PF SMD
TERMINAL BLOCK BARRIER
MOSFET N-CH 20V 180A D2PAK
8D 8C 8#16 SKT RECP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 180A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4mOhm @ 90A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 79 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5090 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 210W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUFA76437S3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 71A D2PAK |
|
APT1204R7KFLLGMicrosemi |
MOSFET N-CH 1200V 3.5A TO220 |
|
IRF6655TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 4.2A DIRECTFET |
|
IPB04N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 80A D2PAK |
|
NTB30N06LT4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 30A D2PAK |
|
IRFU120Vishay / Siliconix |
MOSFET N-CH 100V 7.7A TO251AA |
|
SPB100N03S2L03TIR (Infineon Technologies) |
MOSFET N-CH 30V 100A TO263-3 |
|
IRF3709ZSPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 87A D2PAK |
|
AUIRLZ44ZSTRLIR (Infineon Technologies) |
MOSFET N-CH 55V 51A SMD DPAK |
|
IRF6633TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 16A DIRECTFET |
|
STP10NK50ZSTMicroelectronics |
MOSFET N-CH 500V 9A TO220AB |
|
IRFD010PBFVishay / Siliconix |
MOSFET N-CH 50V 1.7A 4DIP |
|
IRF1404LIR (Infineon Technologies) |
MOSFET N-CH 40V 162A TO262 |