MEMS OSC XO 75.0000MHZ LVDS SMD
MOSFET N-CH 40V 65A ATPAK
CONN PLUG MALE 6P GOLD SLDR CUP
STD 1EMPR180F K
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | 65A (Tj) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | ATPAK |
包/箱: | ATPAK (2 leads+tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
PHP152NQ03LTA,127NXP Semiconductors |
MOSFET N-CH 25V 75A TO220AB |
![]() |
IRF7807VD1IR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
![]() |
APT17N80BC3GMicrosemi |
MOSFET N-CH 800V 17A TO247-3 |
![]() |
IPB08CNE8N GIR (Infineon Technologies) |
MOSFET N-CH 85V 95A D2PAK |
![]() |
FQAF65N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 49A TO3PF |
![]() |
3N163-E3Vishay / Siliconix |
MOSFET P-CH 40V 50MA TO72 |
![]() |
STP14NF12FPSTMicroelectronics |
MOSFET N-CH 120V 8.5A TO220FP |
![]() |
BTS244Z E3043IR (Infineon Technologies) |
MOSFET N-CH 55V 35A TO220-5-43 |
![]() |
IRF6612TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 24A DIRECTFET |
![]() |
STW23NM60NSTMicroelectronics |
MOSFET N-CH 600V 19A TO247-3 |
![]() |
IRFZ44VZIR (Infineon Technologies) |
MOSFET N-CH 60V 57A TO220AB |
![]() |
FQD7N10LTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.8A DPAK |
![]() |
SI7668ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |