English
简体中文
RES ARRAY 4 RES 4.48K OHM 2012
MOSFET N-CH 60V 120A TO262-3
MICRO SWITCH
PWR XFMR LAMINATED 5VA TH
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.2mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 118µA |
| 栅极电荷 (qg) (max) @ vgs: | 165 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 13000 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 188W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO262-3 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK761R3-30E,118NXP Semiconductors |
MOSFET N-CH 30V 120A D2PAK |
|
FQPF9N50CYDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 9A TO220F-3 |
|
SI4484EY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 4.8A 8SO |
|
PHP101NQ03LT,127NXP Semiconductors |
MOSFET N-CH 30V 75A TO220AB |
|
IRFS17N20DTRRIR (Infineon Technologies) |
MOSFET N-CH 200V 16A D2PAK |
|
IRF6785MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 3.4A DIRECTFET |
|
2N6901Microsemi |
MOSFET N-CH 100V 1.69A TO39 |
|
ZVN4306ASTOBZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.1A E-LINE |
|
FDU8780_F071Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 35A IPAK |
|
IPB80N04S2H4ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO263-3 |
|
AON6410Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 10A/24A 8DFN |
|
BS107PSTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 120MA E-LINE |
|
IRF3707SPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 62A D2PAK |