English
简体中文
IC REG LINEAR 3V 200MA 8SOIC
MOSFET N-CH 75V 200A TO220AB
CONN SOCKET 22-26AWG CRIMP GOLD
SFERNICE POTENTIOMETERS & TRIMME
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMV™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 160 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 430W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQD7N20TM_F080Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 5.3A DPAK |
|
IRL3716SPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 180A D2PAK |
|
64-6006PBFIR (Infineon Technologies) |
MOSFET N-CH 300V 46A TO247AC |
|
FDS4435BZ-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 8.8A 8SOIC |
|
HUFA75823D3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 14A TO252AA |
|
IRFP460PVishay / Siliconix |
MOSFET N-CH 500V 20A TO247-3 |
|
PMF400UN,115NXP Semiconductors |
MOSFET N-CH 30V 830MA SOT323-3 |
|
STB16NF25STMicroelectronics |
MOSFET N-CH 30V 14.5A D2PAK |
|
BSP129L6906HTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 350MA SOT223-4 |
|
IRF634NSPBFVishay / Siliconix |
MOSFET N-CH 250V 8A D2PAK |
|
SI5855DC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2.7A 1206-8 |
|
AO4706Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 16.5A 8SOIC |
|
DMJ70H601SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHANNEL 700V 8A TO252 |