English
简体中文
CRYSTAL 26.0000MHZ 18PF SMD
DIODE ZENER 6.8V 1W DO214AC
MOSFET N-CH 55V 42A I-PAK
TRANS PNP 140V 1A
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 27mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 48 nC @ 5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1700 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF6710S2TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 25V 12A DIRECTFET |
|
IRFU210Vishay / Siliconix |
MOSFET N-CH 200V 2.6A TO251AA |
|
IRFB9N65AVishay / Siliconix |
MOSFET N-CH 650V 8.5A TO220AB |
|
IRL630Vishay / Siliconix |
MOSFET N-CH 200V 9A TO220AB |
|
IXFN20N120Wickmann / Littelfuse |
MOSFET N-CH 1200V 20A SOT-227B |
|
FQU13N06TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10A IPAK |
|
IRLMS5703TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 2.4A MICRO6 |
|
AOI4T60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO251A |
|
BSS123L7874XTIR (Infineon Technologies) |
MOSFET N-CH 100V 170MA SOT23-3 |
|
IRF7526D1IR (Infineon Technologies) |
MOSFET P-CH 30V 2A MICRO8 |
|
AOU7S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO251-3 |
|
STW6N120K3STMicroelectronics |
MOSFET N-CH 1200V 6A TO247 |
|
NTB13N10T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 13A D2PAK |