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RECTIFIER DIODE, SCHOTTKY, 1A, 3
IC EEPROM 16K I2C 5MHZ 8SOIC
THROUGH HOLE PROTOTYPING SHIELD
MOSFET N-CH 100V 40A PPAK SO-8
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| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 14mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 42 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1275 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5W (Ta), 44.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
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