English
简体中文
XTAL OSC VCXO 15.3600MHZ LVPECL
MOSFET N-CH 40V 42A DPAK
CONN RCPT FMALE 19POS GOLD CRIMP
INSULATION DISPLACEMENT TERMINAL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 9mOhm @ 42A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 45 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1510 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 90W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSS127 E6327IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
|
IRFI9640GVishay / Siliconix |
MOSFET P-CH 200V 6.1A TO220-3 |
|
SUD50N03-16P-E3Vishay / Siliconix |
MOSFET N-CH 30V TO252 |
|
TPC8026(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 13A 8SOP |
|
NTB75N06LT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
|
IRFHM7194TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 9.3A/34A 8PQFN |
|
IRF3707ZCSTRRIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |
|
IRL3103STRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 64A D2PAK |
|
IXTA76N075TWickmann / Littelfuse |
MOSFET N-CH 75V 76A TO263 |
|
IRF7421D1IR (Infineon Technologies) |
MOSFET N-CH 30V 5.8A 8SO |
|
STV240N75F3STMicroelectronics |
MOSFET N-CH 75V 240A 10POWERSO |
|
FQP47P06_NW82049Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 47A TO220-3 |
|
IRF9392TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 9.8A 8SO |